SiC modules meet diverse power requirements

SemiQ’s 1200-V SiC MOSFETs can be copackaged with or without a 1200-V SiC Schottky barrier diode (SBD) in SOT-227 packages. The QSiC modules provide a breakdown voltage of >1400 V and low on-resistance shift over the full operating temperature range of -55°C to +175°C. They are offered in 20-mΩ, 40-mΩ, and 80-mΩ SiC MOSFET categories.

Target markets for the copackaged SiC modules include EV charging, on-board chargers, energy storage systems, solar and wind energy, and many other automotive, industrial, and medical power applications. All of the modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage.

In addition to the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests—such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)— ensure requisite industrial-grade quality levels.

Follow the product page link below to access datasheets and to request samples or volume pricing.

QSiC module product page


Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

googletag.cmd.push(function() { googletag.display(‘div-gpt-ad-native’); });

The post SiC modules meet diverse power requirements appeared first on EDN.

Source link

Related Articles

Leave a Reply

Your email address will not be published. Required fields are marked *

Back to top button
Translate »